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BAV99_SER All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 4 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes
6. Thermal characteristics
[1] Single diode loaded.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Soldering points at pins 2, 3, 5 and 6.
7. Characteristics
[1] When switched from IF
= 10 mA to IR
=10mA; RL
= 100
Ω; measured at IR
=1mA.
[2] When switched from IF
=10mA; tr
=20ns.
Table 7. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
BAV99 - - 500 K/W
BAV99W - - 625 K/W
Rth(j-sp)
thermal resistance from
junction to solder point
BAV99 - - 360 K/W
BAV99S
[3]
- - 260 K/W
BAV99W - - 300 K/W
Table 8. Characteristics
Tamb
=25°C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage IF
= 1 mA - - 715 mV
IF
= 10 mA - - 855 mV
IF
=50mA --1V
IF
=150mA --1.25V
IR
reverse current VR
=25V --30nA
VR
=80V --0.5μA
VR=25V; Tj
=150°C --30μA
VR=80V; Tj
=150°C --50μA
Cd
diode capacitance f = 1 MHz; VR
=0V --1.5pF
trr
reverse recovery time
[1]
--4ns
VFR
forward recovery voltage
[2]
--1.75V
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